2N7400

The 2N7400 is N-Channel Power MOSFET designed by Intersil Corporation.

Product Overview

Intersil Corporation

Datasheet Details

Part number	2N7400
Manufacturer	Intersil Corporation
File Size	78.73 KB
Description	N-Channel Power MOSFET
Datasheet	2N7400_IntersilCorporation.pdf
Additional preview pages of the 2N7400 datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

8A, 200V, rDS(ON) = 0.440Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 3.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

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Other Datasheets by Intersil Corporation

2N7288D - Radiation Hardened N-Channel Power MOSFETs
2N7288H - Radiation Hardened N-Channel Power MOSFETs
2N7288R - Radiation Hardened N-Channel Power MOSFETs

Published: Sep 25, 2009 |