2N7400 Datasheet N-Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

2N7400 n-channel power mosfet by Intersil (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2N7400
Manufacturer	Intersil (now Renesas)
File Size	78.73 KB
Description	N-Channel Power MOSFET
Datasheet	2N7400 Datasheet

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.

Overview

www.DataSheet4U.com JANSR2N7400 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power.

Key Features

8A, 200V, rDS(ON) = 0.440Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 3.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

More Datasheets from Intersil (now Renesas)

Part Number	Description
2N7288D	Radiation Hardened N-Channel Power MOSFETs
2N7288H	Radiation Hardened N-Channel Power MOSFETs
2N7288R	Radiation Hardened N-Channel Power MOSFETs