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ACS20MS Datasheet

Radiation Hardened Dual 4-Input NAND Gate

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ACS20MS
April 1995
Radiation Hardened
Dual 4-Input NAND Gate
Features
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C
TOP VIEW
• Single Event Upset (SEU) Immunity
<1 x 10-10 Errors/Bit-Day (Typ)
• SEU LET Threshold >80 MEV-cm2/mg
• Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
A1 1
B1 2
NC 3
C1 4
D1 5
Y1 6
GND 7
14 VCC
13 D2
12 C2
11 NC
10 B2
9 A2
8 Y2
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current 1µA at VOL, VOH
Description
The Intersil ACS20MS is a radiation hardened dual 4-input
NAND gate. A low on any input forces the output to a high logic
state.
The ACS20MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
14 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
NC
C1
D1
Y1
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
D2
C2
NC
B2
A2
Y2
Ordering Information
PART NUMBER
ACS20DMSR
ACS20KMSR
ACS20D/Sample
ACS20K/Sample
ACS20HMSR
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
+25oC
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
Truth Table
INPUTS
OUTPUT
An Bn Cn Dn
Yn
LXXX
H
XLXX
H
XXLX
H
XXXL
H
HHHH
L
NOTE: L = Logic Level Low, H = Logic level High, X = Don’t Care
Functional Diagram
(1, 9)
An
Bn
(2, 10)
(4, 12)
Cn
Dn
(5, 13)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
(6, 8)
Yn
Spec Number 518815
File Number 3616


Intersil Electronic Components Datasheet

ACS20MS Datasheet

Radiation Hardened Dual 4-Input NAND Gate

No Preview Available !

Specifications ACS20MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range . . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
Thermal Impedance
θJA
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W
Maximum Package Power Dissipation at +125oC
θJC
24oC/W
30oC/W
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (TR, TF) . . . . . . .10ns/ V Max
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
Output Current
(Sink)
Output Voltage High
Output Voltage Low
Input Leakage
Current
IOH
IOL
VOH
VOL
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
VCC = 5.5V,
VIN = VCC or GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
MIN MAX
+25oC
-5
+125oC, -55oC
- 100
+25oC
-12 -
+125oC, -55oC
-8 -
+25oC
12 -
+125oC, -55oC
8-
+25oC, +125oC, -55oC VCC -0.1 -
1, 2, 3
+25oC, +125oC, -55oC VCC -0.1 -
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
1
2, 3
7, 8A, 8B
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
-
-
-
±0.5
±1.0
-
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
V
µA
µA
V
NOTES:
1. All voltages referenced to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
Spec Number 518815
2


Part Number ACS20MS
Description Radiation Hardened Dual 4-Input NAND Gate
Maker Intersil Corporation
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ACS20MS Datasheet PDF






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