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ACS20MS - Radiation Hardened Dual 4-Input NAND Gate

General Description

The Intersil ACS20MS is a radiation hardened dual 4-input NAND gate.

A low on any input forces the output to a high logic state.

The ACS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 1.25 Micron Radiation Hardened SOS CMOS.
  • Total Dose 300K RAD (Si).
  • Single Event Upset (SEU) Immunity 80 MEV-cm2/mg.
  • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to ALSTTL Logic.
  • DC Operating Voltage Range: 4.5V to 5.5V.
  • Input Logic Levels.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
ACS21MS Radiation Hardened Dual 4-Input AND Gate
ACS240MS Radiation Hardened Inverting/ Octal/ Three-State Buffer/Line Driver
ACS244MS Radiation Hardened Non-Inverting/ Octal/ Three-State Buffer/Line Driver
ACS245MS Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver
ACS253MS Radiation Hardened Dual 4-Input Multiplexer

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACS20MS April 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 GND 7 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold >80 MEV-cm2/mg • Dose Rate Upset >1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to ALSTTL Logic • DC Operating Voltage Range: 4.5V to 5.