* 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power
* rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such a.

such as
* SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
*.

BUZ305

BUZ307

BUZ308

BUZ30A

BUZ30AH

BUZ30AH3045A

BUZ31

BUZ310

BUZ311

BUZ312

BUZ31H

BUZ31H3045A

BUZ31H3046