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BUZ73A
Semiconductor
Data Sheet
October 1998
File Number 2263.1
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
Features
• 5.8A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, • High Input Impedance 0.600 Formerly developmental type TA4600.
BUZ73A Datasheet
