BUZ73A Datasheet | Intersil

Features - 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power - r DS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as - SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, - High Input Impedance 0.600 Formerly developmental type TA4600. - Majority Carrier Device Ohm, N- Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power ponents to PC Boards” BUZ73A TO-220AB BUZ73A MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /Key G words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN GATE TODRAIN (FLANGE) 220AB) /Creator () /DOCIN FO pdfmark [ /Page Mode /Use Outlines /DOCVIEW CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified BUZ76A 200 200 5.8 23 ±20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/o C o C Drain to Source Breakdown Voltage (Note 1) - - - - - - - .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - - . . . . VDGR Continuous Drain Current (TC = 30o C) - - - - - - - - . . ID Pulsed Drain Current (Note 3) - - - - - - - - - . . . IDM Gate to Source Voltage - - - - - - - - -...