BUZ73A
Overview
- 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching
- Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V,
- High Input Impedance 0.600 Formerly developmental type TA4600.
- Majority Carrier Device Ohm, N
- Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ73A TO-220AB BUZ73A MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN GATE TODRAIN (FLANGE) 220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ73A
