BUZ73A Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 150 °C
Key Features
- 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as
- Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V
- High Input Impedance 0.600 Formerly developmental type TA4600
