• Part: FSTYC9055D
  • Description: Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
  • Category: MOSFET
  • Manufacturer: Intersil
  • Size: 74.87 KB
FSTYC9055D Datasheet (PDF) Download
Intersil
FSTYC9055D

Key Features

  • 64A, -60V, rDS(ON) = 0.023Ω
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
  • Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
  • Photo Current - 6nA Per-RAD (Si)/s Typically
  • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol