FSYC9160D mosfets equivalent, radiation hardened/ segr resistant p-channel power mosfets.
* 47A, -100V, rDS(ON) = 0.053Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin.
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