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HCS21MS - Radiation Hardened Dual 4-Input AND Gate

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General Description

The Intersil HCS21MS is a Radiation Hardened Dual Input AND Gate.

A high on all inputs forces the output to a High state.

The HCS21MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Overview

HCS21MS September 1995 Radiation Hardened Dual 4-Input AND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 GND 7 14 VCC.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >10 10 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Ope.

More Datasheets from Intersil (now Renesas)

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