* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010
HCS20MS
Intersil Corporation
179.29 KB
Radiation hardened dual 4-input nand gate.
HCS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T.
📁 Related Datasheet
HCS200 KEELOQ CODE HOPPING ENCODER (Microchip Technology)
HCS201 KEELOQ Code Hopping Encoder (Microchip Technology)
HCS20NT60V N-Channel MOSFET (SemiHow)
HCS21MS Radiation Hardened Dual 4-Input AND Gate (Intersil Corporation)
HCS240MS Radiation Hardened Octal Buffer/Line Driver (Intersil Corporation)
HCS241MS Radiation Hardened Inverting Octal Three-State Buffer/Line Driver (Intersil Corporation)
HCS244MS Radiation Hardened Octal Buffer/Line Driver/ Three-State (Intersil Corporation)
HCS244T Radiation Hardened Octal Buffer/Line Driver/ Three-State (Intersil Corporation)
HCS245MS Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting (Intersil Corporation)
HCS2512 METAL STRIP CURRENT SENSING RESISTORS (HITANO)
