HGTD10N50F1 igbts equivalent, 10a/ 400v and 500v n-channel igbts.
* 10A, 400V and 500V
* VCE(ON) 2.5V Max.
* TFALL ≤1.4µs
* Low On-State Voltage
* Fast Switching Speeds
* High Input Impedance
Applications
* .
* Power Supplies
* Motor Drives
* Protective Circuits
COLLECTOR (FLANGE) GATE EMITTER
HGTD10N40F1S, HGTD10N.
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These ty.
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