of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.

operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117. Featu.

HGTG12N60A4

HGTG12N60A4D

HGTG12N60B3

HGTG12N60B3D

HGTG12N60D1

HGTG12N60D1D

HGTG10N120BN

HGTG10N120BND

HGTG11N120CN

HGTG11N120CND

HGTG15N120C3

HGTG15N120C3D

HGTG18N120BN