* 12A, 600V
* Latch Free Operation
* Typical Fall Time <500ns
* Low Conduction Loss
* With Anti-Parallel Diode
* tRR < 60ns Description The IGBT .

operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies an.

The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-.

HGTG12N60D1

HGTG12N60A4

HGTG12N60A4D

HGTG12N60B3

HGTG12N60B3D

HGTG12N60C3D

HGTG10N120BN

HGTG10N120BND

HGTG11N120CN

HGTG11N120CND

HGTG15N120C3

HGTG15N120C3D

HGTG18N120BN