HGTG30N120D2 igbt equivalent, n-channel igbt.
* 30A, 1200V
* Latch Free Operation
* Typical Fall Time - 580ns
* High Input Impedance
* Low Conduction Loss
Description
The HGTG30N120D2 is a MOS ga.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l.
Image gallery
TAGS
Manufacturer
Related datasheet