* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. Th
HGTG30N60A4D Datasheet (393.03 KB)
HGTG30N60A4D
393.03 KB
N-channel igbt.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices combin.
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