Part number:
HGTG30N60B3D
Manufacturer:
Intersil Corporation
File Size:
109.09 KB
Description:
N-channel igbt.
HGTG30N60B3D_IntersilCorporation.pdf
Datasheet Details
HGTG30N60B3D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in
HGTG30N60B3D_IntersilCorporation.pdf
Datasheet Details
HGTG30N60B3D
Intersil Corporation
109.09 KB
N-channel igbt.
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