HGTG30N60B3D - N-Channel IGBT

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Intersil Corporation

Part number	HGTG30N60B3D
Manufacturer	Intersil Corporation
File Size	109.09 KB
Description	N-Channel IGBT
Datasheet	HGTG30N60B3D Datasheet
Additional preview pages of the HGTG30N60B3D datasheet.

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |