HGTG34N100E2 igbt equivalent, n-channel igbt.
* 34A, 1000V
* Latch Free Operation
* Typical Fall Time - 710ns
* High Input Impedance
* Low Conduction Loss
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Descripti.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l.
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