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HGTG34N100E2 Datasheet, Intersil Corporation

HGTG34N100E2 Datasheet, Intersil Corporation

HGTG34N100E2

datasheet Download (Size : 38.79KB)

HGTG34N100E2 Datasheet

HGTG34N100E2 igbt equivalent, n-channel igbt.

HGTG34N100E2

datasheet Download (Size : 38.79KB)

HGTG34N100E2 Datasheet

Features and benefits


* 34A, 1000V
* Latch Free Operation
* Typical Fall Time - 710ns
* High Input Impedance
* Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Descripti.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Description

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l.

Image gallery

HGTG34N100E2 Page 1 HGTG34N100E2 Page 2 HGTG34N100E2 Page 3

TAGS

HGTG34N100E2
N-Channel
IGBT
Intersil Corporation

Manufacturer


Intersil Corporation

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