Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www. fairchildsemi. com.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HUF75309P3 HUF75309D3 HUF75309D3S.
Full PDF Text Transcription for HUF75309D3S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HUF75309D3S. For precise diagrams, and layout, please refer to the original PDF.
HUF75309P3, HUF75309D3, HUF75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using th...
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Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Fo
HUF75309D3S Datasheet
