* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteri.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF420

IRF421

IRF423

IRF4000

IRF40B207

IRF40N03

IRF40R207

IRF40SC240

IRF4104

IRF4104GPbF

IRF4104L

IRF4104LPbF

IRF4104PbF