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Intersil Electronic Components Datasheet

IRF610 Datasheet

N-Channel Power MOSFET

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Data Sheet
IRF610
June 1999 File Number 1576.3
3.3A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF610
TO-220AB
IRF610
NOTE: When ordering, use the entire part number.
Features
• 3.3A, 200V
• rDS(ON) = 1.500
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-190
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

IRF610 Datasheet

N-Channel Power MOSFET

No Preview Available !

IRF610
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF610
200
200
3.3
2.1
8
±20
43
0.34
46
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
VGS(TH) VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = Max Rating, VGS = 0V
VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 1.6A (Figures 8, 9)
VDS 50V, ID = 1.6A (Figure 12)
VDD = 100V, ID 3.3A, RG = 24, RL = 30
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 11)
Internal Drain Inductance
Internal Source Inductance
LD Measured From the
Modified MOSFET
Contact Screw on Tab to Symbol Showing the
Center of Die
Internal Device
Measured From the Drain
Lead, 6mm (0.25in) From
Inductances
D
Package to Center of Die
LD
LS Measured From the Source
Lead, 6mm (0.25in) from
G
Header to Source Bonding
LS
Pad
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Free Air Operation
MIN TYP MAX UNITS
200 - - V
2-4V
- - 25 µA
- - 250 µA
3.3 - - A
- - ±100 nA
- 1.0 1.5
0.8 1.3
-
S
- 8 12 ns
- 17 26 ns
- 13 21 ns
- 9 13 ns
-
5.3 8.2
nC
- 1.2 -
- 3.0 -
- 135 -
- 60 -
- 16 -
- 3.5 -
nC
nC
pF
pF
pF
nH
- 4.5 -
nH
- 7.5 -
nH
- - 2.9 oC/W
- - 80 oC/W
4-191


Part Number IRF610
Description N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 7 Pages
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