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Intersil Electronic Components Datasheet

IRFC9110 Datasheet

P-Channel Power MOSFET

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Data Sheet
July 1999
IRFD9110
www.DataSheet4U.com
File Number 2215.3
0.7A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9110
HEXDIP
IRFD9110
NOTE: When ordering, use the entire part number.
Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-39
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

IRFC9110 Datasheet

P-Channel Power MOSFET

No Preview Available !

IRFD9110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
www.DataSheet4U.com
IRFD9110
-100
-100
-0.7
-3.0
±20
1.0
0.008
190
-55 to 150
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
300 oC
260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BVDSS
VGS(TH)
IDSS
ID(ON)
ID = -250µA, VGS = 0V, (Figure 9)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V,
(Figure 6)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
VGS = ±20V
ID = -0.3A, VGS = -10V, (Figures 8)
VDS 50V, ID = -0.6A, (Figure 11)
VDD = 0.5 x Rated BVDSS, ID = -0.7A, RG = 9.1,
VGS =-10V, (Figures 16, 17),
RL = 70for VDSS = 50V
RL = 56for VDSS = 40V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
VGS = -10V, ID = -0.7A, VDS = 0.8V x Rated BVDSS,
(Figures 13, 18, 19) Gate Charge is
Essentially Independent of Operating
Temperature
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10)
Measured From the Drain
Lead, 2mm (0.08in) From
Package to Center of Die
Measured From the
Source Lead, 2mm
(0.08in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
MIN
-100
-2
-
-
-0.7
-
-
0.59
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
--V
- -4 V
- -25 µA
- -250 µA
--A
-
1.000
0.88
15
30
20
20
±100
1.200
-
30
60
40
40
nA
S
ns
ns
ns
ns
11 15 nC
5.7 -
5.3 -
180 -
85 -
30 -
4.0 -
nC
nC
pF
pF
pF
nH
6.0 -
nH
Thermal Resistance Junction to Ambient
RθJA Typical Socket Mount
S
- - 120 oC/W
4-40


Part Number IRFC9110
Description P-Channel Power MOSFET
Maker Intersil Corporation
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IRFC9110 Datasheet PDF





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