Datasheet4U Logo Datasheet4U.com

IRFC9110 - P-Channel Power MOSFET

Features

  • 0.7A, 100V.
  • rDS(ON) = 1.200Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110.

📥 Download Datasheet

Datasheet preview – IRFC9110

Datasheet Details

Part number IRFC9110
Manufacturer Intersil
File Size 83.03 KB
Description P-Channel Power MOSFET
Datasheet download datasheet IRFC9110 Datasheet
Additional preview pages of the IRFC9110 datasheet.

📁 Similar Datasheet

  • IRFC9110 - P-Channel Power MOSFET (IRF)
  • IRFC150 - High Voltage Power MOSFET (IXYS Corporation)
  • IRFC240 - HEXFET Power MOSFET (International Rectifier)
  • IRFC250 - High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series (IXYS Corporation)
  • IRFC2907B - HEXFET Power MOSFET (International Rectifier)
  • IRFC350 - N-Channel MOSFET (IXYS Corporation)
  • IRFC450 - HIGH VOLTAGE POWER MOSFET (IXYS Corporation)
  • IRF-24 - Inductors (Vishay)
  • IRF-36 - Inductors (Vishay)
  • IRF-46 - Inductors (Vishay Siliconix)
Other Datasheets by Intersil Corporation
  • IRF120 - Power MOSFET
  • IRF121 - N-Channel Power MOSFET
  • IRF122 - N-Channel Power MOSFET
  • IRF123 - N-Channel Power MOSFET
  • IRF130 - N-Channel Power MOSFET
  • IRF140 - N-Channel Power MOSFET
  • IRF150 - N-Channel Power MOSFET
  • IRF220 - N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
IRFD9110 www.DataSheet4U.com Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17541. Features • 0.7A, 100V • rDS(ON) = 1.
Published: |