IRF121 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.

Datasheet Details

Part number	IRF121
Manufacturer	Intersil (now Renesas)
File Size	68.22 KB
Description	N-Channel Power MOSFET
Datasheet	IRF121_IntersilCorporation.pdf

General Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

8.0A and 9.2A, 80V and 100V.
rDS(ON) = 0.27Ω and 0.36Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123.

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Similar Datasheet

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More Datasheets from Intersil (now Renesas)

Part Number	Description
IRF120	Power MOSFET
IRF122	N-Channel Power MOSFET
IRF123	N-Channel Power MOSFET
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IRF140	N-Channel Power MOSFET
IRF150	N-Channel Power MOSFET
IRF220	N-Channel Power MOSFET
IRF221	N-Channel Power MOSFET
IRF222	N-Channel Power MOSFET
IRF223	N-Channel Power MOSFET