IRF123
Description
Drain Current ID=7A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) Nanosecond Switching Speeds.
- Part: IRF123
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 42.51 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF123 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF122 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF120 | Samsung Semiconductor | N-CHANNEL POWER MOSFET |
| IRF121 | Samsung Semiconductor | N-Channel Power MOSFET |