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Intersil Electronic Components Datasheet

JANSR2N7408 Datasheet

Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

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Data Sheet
JANSR2N7408
December 1998
File Number 4637
Formerly Available As FSF450R4,
Radiation Hardened, SEGR Resistant,
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page:
http://www.semi.intersil.com. Contact your local Intersil
Sales Office for additional information.
Ordering Information
PART NUMBER
PACKAGE
BRAND
JANSR2N7408
TO-254AA
JANSR2N7408
Die Family TA17659.
MIL-PRF-19500/634.
Features
• 9A, 500V, rDS(ON) = 0.600
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up
to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 30nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm2
• Usable to 3E13 Neutrons/cm2
Symbol
Packaging
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

JANSR2N7408 Datasheet

Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

No Preview Available !

JANSR2N7408
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JANSR2N7408
500
500
9
6
27
±20
125
50
1.00
27
9
27
-55 to 150
300
9.3
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (12)
Qg (TH)
Qgs
Qgd
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 400V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VGS = 12V, ID = 9A
ID = 6A,
VGS = 12V
TC = 25oC
TC = 125oC
VDD = 250V, ID = 9A,
RL = 27.8, VGS = 12V,
RGS = 2.35
VGS = 0V to 20V
VGS = 0V to 12V
VGS = 0V to 2V
VDD = 250V,
ID = 9A
MIN TYP MAX UNITS
500 -
-V
- - 5.0 V
1.5 - 4.0 V
0.5 -
-V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - 5.67 V
-
0.425 0.600
- - 1.20
- - 150 ns
- - 140 ns
- - 180 ns
- - 70 ns
- - 220 nC
-
110 150
nC
- - 8.2 nC
- 21 28 nC
- 49 62 nC
- - 1.00 oC/W
- - 48 oC/W
4-2


Part Number JANSR2N7408
Description Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Maker Intersil Corporation
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JANSR2N7408 Datasheet PDF






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