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JANSR2N7408 - Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

Features

  • 9A, 500V, rDS(ON) = 0.600Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 30nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Speci.

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Datasheet Details

Part number JANSR2N7408
Manufacturer Intersil (Renesas)
File Size 55.33 KB
Description Formerly Available As FSF450R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Datasheet download datasheet JANSR2N7408 Datasheet

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Other Datasheets by Intersil (Renesas)

Part Number Description
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7401 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7402 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
JANSR2N7404 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET

Full PDF Text Transcription

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JANSR2N7408 Data Sheet December 1998 File Number 4637 Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
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