P45N02 Datasheet | Intersil

Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49243. Features - 45A, 20V - r DS(ON) = 0.022Ω - Temperature pensating PSPICE Model - Can be Driven Directly from CMOS, NMOS, and TTL Circuits - Peak Current vs Pulse Width Curve - UIS Rating Curve - 175o C Operating Temperature Ordering Information PART NUMBER RFP45N02L RF1S45N02L RF1S45N02LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N02L F45N02L Symbol F45N02L NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S45N02LSM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number RFP45N02L, RF1S45N02L, RF1S45N02LSM Absolute Maximum Ratings TC = 25o C Unless Otherwise Specified RFP45N02L, RF1S45N02L, RF1S45N02LSM Drain to Source Voltage - - -...