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P45N02LI
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID 26A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC = 25 °C TC = 100 °C
ID
IDM IAS
26 16 70 13
Avalanche Energy
L = 0.1 mH
EAS
9
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
22 8.9 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty Cycle 1％.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 5.6 70
UNITS °C / W
REV 1.
P45N02LI Datasheet
