P45N02LDG Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID 32 20 IDM 110 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 27 Power Dissipation TC = 25 °C PD 35 TC = 100 °C 14 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. 2Limited by package, Duty cycle  1%. SYMBOL RqJC RqJA RqCS TYPICAL 0.7 MAXIMUM 3.6 75 UNITS °C / W Ver 1.1 1 2013-3-13 P45N02LDG N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS...