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P45N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
25V
20mΩ @VGS = 10V
32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
25
Gate-Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID
32 20
IDM
110
Avalanche Current
IAS
23
Avalanche Energy
L = 0.1mH
EAS
27
Power Dissipation
TC = 25 °C
PD
35
TC = 100 °C
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. 2Limited by package, Duty cycle 1%.