RFK25N20 - N-Channel Power MOSFET
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliab
RFK25N18, RFK25N20 Data Sheet October 1998 File Number 1500.3 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type
RFK25N20 Features
* 25A, 180V and 200V
* rDS(ON) = 0.150Ω
Symbol
D
G
Ordering Information
PART NUMBER RFK25N18 RFK25N20 PACKAGE TO-204AE TO-204AE BRAND RFK25N18 RFK25N20
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAU
