RFL1N10 mosfet equivalent, n-channel power mosfet.
* 1A, 80V and 100V
* rDS(ON) = 1.200Ω
[ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris .
such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar swit.
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requir.
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