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Semiconductor
RFL1N12L, RFL1N15L
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528.
September 1998
Features
• 1A, 120V and 150V • rDS(ON) = 1.900Ω
[ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.
RFL1N12L Datasheet
