RFL1N12L Overview
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off...
RFL1N12L Key Features
- 1A, 120V and 150V
- rDS(ON) = 1.900Ω