RFL1N12L - N-Channel Power MOSFET

Product Overview

Intersil Corporation

Datasheet Details

Part number	RFL1N12L
Manufacturer	Intersil Corporation
File Size	31.00 KB
Description	N-Channel Power MOSFET
Datasheet	RFL1N12L Datasheet
Additional preview pages of the RFL1N12L datasheet.

Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

Features

1A, 120V and 150V.
rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L RFL1N15L.

📁 Similar Datasheet

RFLA1010 - HIGH-LINEARITY AMPLIFIER (RF Micro Devices)
RFLA1018 - VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER (RFMD)
RFLA1018S - High Linearity Amplifier (RF Micro Devices)
RFLA1022 - High Linearity Amplifier (RF Micro Devices)
RFLA1038 - Variable Gain Low Noise High Linearity Amplifier (RF Micro Devices)
RFLA2018 - Variable Gain Low Noise High Linearity Amplifier (RFMD)
RFLA9002 - Dual Low Noise Amplifier (RF Micro Devices)
RFLA9003 - Dual Low Noise Amplifier (RF Micro Devices)

Other Datasheets by Intersil Corporation

RFL1N12 - N-Channel Power MOSFET
RFL1N10 - N-Channel Power MOSFET
RFL1N10L - N-Channel Power MOSFET
RFL1N12 - N-Channel Power MOSFET
RFL1N15 - N-Channel Power MOSFET
RFL1N15L - N-Channel Power MOSFET

Published: Apr 16, 2005 |