RFL1N12L Datasheet | Intersil

Semiconductor RFL1N12L, RFL1N15L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528. September 1998 Features - 1A, 120V and 150V - rDS(ON) = 1.900Ω [...