* 1A, 120V and 150V
* rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /.

such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a.

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This perf.

RFL1N12

RFL1N10

RFL1N10L

RFL1N15

RFL1N15L

RFL1N18

RFL1N08

RFL1N20

RFL1P08

RFL1P10

RFL2N05

RFL2N06

RFL2N06L