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RFL1N12 N-Channel Power MOSFET

RFL1N12 Description

Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.

RFL1N12 Features

* 1A, 120V and 150V
* rDS(ON) = 1.9Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Solder

RFL1N12 Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. January 1998

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Datasheet Details

Part number
RFL1N12
Manufacturer
Intersil Corporation
File Size
43.24 KB
Datasheet
RFL1N12_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
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