RFL1N12 Datasheet - Intersil Corporation

RFL1N12 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

RFL1N12 Features

* 1A, 120V and 150V

* rDS(ON) = 1.9Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solder

RFL1N12_IntersilCorporation.pdf

RFL1N12 Datasheet Preview — Preview of RFL1N12 PDF

Datasheet Details

Part number:

RFL1N12

Manufacturer:

Intersil Corporation

File Size:

43.24 KB

Description:

N-channel power mosfet.

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RFL1N12 RFL1N12 N-Channel Power MOSFET Intersil Corporation

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