RFL1N12 Datasheet (Intersil Corporation)

RFL1N12, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These typ

RFL1N12 Features

* 1A, 120V and 150V

* rDS(ON) = 1.9Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solder