RFL1N10 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs .
These are N-channel enhancement mode silicon-gate power ﬁeld-effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFL1N10
Manufacturer: Intersil Corporation
File Size: 30.56 KB
Datasheet: RFL1N10_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 1A, 80V and 100V
* rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering Information PART NUMBER RFL1N08 RFL1

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. September 1998

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RFL1N10 N-Channel Power MOSFET Intersil Corporation

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