RFL1N10 Datasheet - Intersil Corporation

RFL1N10 N-Channel Power MOSFET

These are N-channel enhancement mode silicon-gate power ﬁeld-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These typ.

RFL1N10 Features

* 1A, 80V and 100V

* rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering Information PART NUMBER RFL1N08 RFL1

RFL1N10_IntersilCorporation.pdf