RFL1N10 Datasheet, Mosfet, Intersil Corporation

RFL1N10 Features

• Mosfet
• 1A, 80V and 100V
• rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semicon

PDF File Details

Part number:

RFL1N10

Manufacturer:

Intersil Corporation

File Size:

30.56kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulator

RFL1N10 Application

• Applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transisto

TAGS

RFL1N10

Intersil Corporation

📁 Related Datasheet

RFL1N10L - N-Channel Power MOSFET (Intersil Corporation)
RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power.

RFL1N12 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate powe.

RFL1N12L - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N12L, RFL1N15L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode .

RFL1N15 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate powe.

RFL1N15L - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N12L, RFL1N15L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode .

RFL1N18 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate pow.

RFL1N08 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate po.

RFL1N20 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate pow.

RFL1P08 - P-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate po.

RFL1P10 - P-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate po.