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RFL1N10L N-Channel Power MOSFET

RFL1N10L Description

RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET .
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in.

RFL1N10L Features

* 1A, 100V
* rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic disch

RFL1N10L Applications

* such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit sup

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Datasheet Details

Part number
RFL1N10L
Manufacturer
Intersil Corporation
File Size
29.91 KB
Datasheet
RFL1N10L_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
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