RFL1N10L Datasheet - Intersil Corporation

RFL1N10L N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxi.

RFL1N10L Features

* 1A, 100V

* rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic disch

RFL1N10L_IntersilCorporation.pdf