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RFL1N15

N-Channel Power MOSFET

RFL1N15 Features

* 1A, 120V and 150V

* rDS(ON) = 1.9Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solder

RFL1N15 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

RFL1N15 Datasheet (43.24 KB)

Preview of RFL1N15 PDF

Datasheet Details

Part number:

RFL1N15

Manufacturer:

Intersil Corporation

File Size:

43.24 KB

Description:

N-channel power mosfet.

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RFL1N15 N-Channel Power MOSFET Intersil Corporation

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