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RFL1N18 N-Channel Power MOSFET

RFL1N18 Description

Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.

RFL1N18 Features

* 1A, 180V and 200V
* rDS(ON) = 3.65Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Solde

RFL1N18 Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. January 1998

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Datasheet Details

Part number
RFL1N18
Manufacturer
Intersil Corporation
File Size
43.36 KB
Datasheet
RFL1N18_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
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