RFL1N18 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

📥 Download Datasheet

RFL1N18 Datasheet Preview — Preview of RFL1N18 PDF

Datasheet Specifications

Part number: RFL1N18
Manufacturer: Intersil Corporation
File Size: 43.36 KB
Datasheet: RFL1N18_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 1A, 180V and 200V
* rDS(ON) = 3.65Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Solde

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. January 1998

RFL1N18 Distributors

📁 Related Datasheet

RFLA1010 RFLA1018 RFLA1018S RFLA1022 RFLA1038 RFLA2018

📌 All Tags

RFL1N18 N-Channel Power MOSFET Intersil Corporation

Intersil Corporation RFL1N18-like datasheet