RFL1N12L N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL1N12L, RFL1N15L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in.

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Datasheet Specifications

Part number: RFL1N12L
Manufacturer: Intersil Corporation
File Size: 31.00 KB
Datasheet: RFL1N12L_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 1A, 120V and 150V
* rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L

Applications

* such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit sup

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RFL1N12L N-Channel Power MOSFET Intersil Corporation

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