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RFL1N12L

N-Channel Power MOSFET

RFL1N12L Features

* 1A, 120V and 150V

* rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L

RFL1N12L General Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxi.

RFL1N12L Datasheet (31.00 KB)

Preview of RFL1N12L PDF

Datasheet Details

Part number:

RFL1N12L

Manufacturer:

Intersil Corporation

File Size:

31.00 KB

Description:

N-channel power mosfet.

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RFL1N12L N-Channel Power MOSFET Intersil Corporation

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