RFL1N12L Datasheet - Intersil Corporation

RFL1N12L N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxi.

RFL1N12L Features

* 1A, 120V and 150V

* rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L

RFL1N12L_IntersilCorporation.pdf