RFLA1038
RF Micro Devices
1.17MB
Variable gain low noise high linearity amplifier. Reference Designator Manufacturer Manufacturer's P/N Evaluation Board CAP, 0.1µF, 10%, 16V, X7R, 0402 C1, C3, C5-C6, C8-C9 DDI
TAGS
📁 Related Datasheet
RFLA1010 - HIGH-LINEARITY AMPLIFIER
(RF Micro Devices)
RFLA1010 Step Gain, Low Noise, HighLinearity Amplifier 1920MHz to 1980MHz
RFLA1010
STEP GAIN, LOW NOISE, HIGH-LINEARITY
AMPLIFIER 1920MHZ TO 1980MH.
RFLA1018 - VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER
(RFMD)
RFLA1018Variable Gain Low Noise High Linearity Amplifier
RFLA1018
VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER
Package Style: MCM 16-Pin, 8.0mm.
RFLA1018S - High Linearity Amplifier
(RF Micro Devices)
RFLA1018S
Variable Gain, Low Noise, High Linearity Amplifier 1920MHz to 1980MHz
The RFLA1018S is an analog controlled voltage variable gain amplifier .
RFLA1022 - High Linearity Amplifier
(RF Micro Devices)
RFLA1022
Low Noise, High Linearity Amplifier 400MHz to 1500MHz
RFMD’s RFLA1022 is a Low Noise, High Linearity Amplifier housed in a 2.0mm x 2.0mm DFN .
RFLA2018 - Variable Gain Low Noise High Linearity Amplifier
(RFMD)
RFMD + TriQuint = Qorvo
RFLA2018
Variable Gain Low Noise High Linearity Amplifier 2500 MHz to 2570 MHz
The RFLA2018 is an analog-controlled voltage .
RFLA9002 - Dual Low Noise Amplifier
(RF Micro Devices)
RFLA9002
Dual Low Noise Amplifier Module 698MHz to 960MHz
RFMD’s RFLA9002 is a dual Low Noise Amplifier module with external connections to both LNAs..
RFLA9003 - Dual Low Noise Amplifier
(RF Micro Devices)
RFLA9003
Dual Low Noise Amplifier Module 1710MHz to 2180MHz
RFMD’s RFLA9003 is a dual Low Noise Amplifier module with external connections to both LNA.
RFL1N08 - N-Channel Power MOSFET
(Intersil Corporation)
Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate po.
RFL1N10 - N-Channel Power MOSFET
(Intersil Corporation)
Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate po.
RFL1N10L - N-Channel Power MOSFET
(Intersil Corporation)
RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power.