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RFL1N20

N-Channel Power MOSFET

RFL1N20 Features

* 1A, 180V and 200V

* rDS(ON) = 3.65Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solde

RFL1N20 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

RFL1N20 Datasheet (43.36 KB)

Preview of RFL1N20 PDF

Datasheet Details

Part number:

RFL1N20

Manufacturer:

Intersil Corporation

File Size:

43.36 KB

Description:

N-channel power mosfet.

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RFL1N20 N-Channel Power MOSFET Intersil Corporation

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