Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- 10A, 450V and 500V.
- rDS(ON) = 0.600Ω
[ /Title (RFM10 N45, RFM10 N50) /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark
Ordering Information
PART NUMBER RFM10N45 RFM10N50.