datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Intersil Electronic Components Datasheet

RFP25N06 Datasheet

25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP25N06 pdf
Data Sheet
RFP25N06, RF1S25N06SM
July 1999 File Number 1492.4
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N06
TO-220AB
RFP25N06
RF1S25N06SM
TO-263AB
F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
Packaging
JEDEC TO- 220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 25A, 60V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-511
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP25N06 Datasheet

25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP25N06 pdf
RFP25N06, RF1S25N06SMS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP25N06,
RF1S25N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
±20
25
(Figure 5)
(Figure 6)
72
0.48
-55 to 175
300
260
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
BVDSS ID = 250µA, VGS = 0V (Figure 11)
60 -
-V
VGS(TH)
IDSS
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V
TC = 25oC
VGS = 0V
TC = 150oC
2 - 4V
- - 1 µA
- - 50 µA
IGSS
VGS = ±20V
-
-
±100
nA
rDS(ON) ID = 25A, VGS = 10V (Figure 9)
-
-
0.047
tON
td(ON)
tr
VDD = 30V, ID = 12.5A
RL = 2.4, VGS = 10V
RGS = 10
(Figure 13)
- - 60 ns
- 14 - ns
- 30 - ns
td(OFF)
- 45 - ns
tf - 22 - ns
tOFF
- - 100 ns
Qg(TOT)
Qg(10)
Qg(TH)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V, ID = 25A,
RL = 1.92
Ig(REF) = 0.75mA
(Figure 13)
-
-
-
- 80 nC
- 45 nC
- 3 nC
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V
f = 1MHz
(Figure 12)
(Figure 3)
- 975 -
pF
- 330 -
pF
- 95 - pF
- - 2.083 oC/W
- - 62 oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD = 25A
ISD = 25A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
4-512


Part Number RFP25N06
Description 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
PDF Download
RFP25N06 pdf
RFP25N06 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 RFP25N05 25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET Intersil Corporation
Intersil Corporation
RFP25N05 pdf
2 RFP25N05 Trans MOSFET N-CH 50V 25A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
New Jersey Semiconductor
RFP25N05 pdf
3 RFP25N05L 25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET Intersil Corporation
Intersil Corporation
RFP25N05L pdf
4 RFP25N06 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
RFP25N06 pdf
5 RFP25N06 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP25N06 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy