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Intersil Electronic Components Datasheet

RFP22N10 Datasheet

22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

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RFP22N10 pdf
Data Sheet
RFP22N10, RF1S22N10SM
July 1999 File Number 2385.3
22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP22N10
TO-220AB
RFP22N10
RF1S22N10SM
TO-263AB
F1S22N10
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.
Features
• 22A, 100V
• rDS(ON) = 0.080
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-499
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP22N10 Datasheet

22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP22N10 pdf
RFP22N10, RF1S22N10SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP22N10,
RF1S22N10SMS
100
100
±20
22
50
100
0.67
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
ID = 250µA, VGS = 0 (Figure 7)
VGS = VDS, ID = 250µA (Figure 9)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0
ID = 22A, VGS = 10V (Figure 8)
VDD = 50Vwwwwwwwww, ID = 11A,
RL = 4.5, VGS = 10V,
RGS = 25
(Figure 11)
tf
t(OFF)
QG(TOT)
QG(10)
QG(TH)
RθJC
RθJA
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
TO-220 and TO-263
VDD = 80V, ID 22A,
RL = 3.64
Ig(REF) = 1mA
(Figure 11)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 22A
Diode Reverse Recovery Time
trr ISD = 22A, dISD/dt = 100A/µs
NOTE:
2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.
MIN TYP MAX UNITS
100 - - V
2 - 4V
- - 1 µA
- - 50 µA
- - ±100 nA
- - 0.080
- - 60 ns
- 13 - ns
- 24 - ns
- 65 - ns
- 18 - ns
- - 120 ns
- - 150 nC
- - 75 nC
- - 3.5 nC
- - 1.5 oC/W
- - 62 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 200 ns
4-500


Part Number RFP22N10
Description 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 6 Pages
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