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Intersil Electronic Components Datasheet

RFP4N06 Datasheet

4A/ 50V and 60V/ 0.800 Ohm/ N-Channel Power MOSFETs

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RFP4N06 pdf
RFP4N05, RFP4N06
June 1999 File Number 2880.2
4A, 50V and 60V, 0.800 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05
TO-220AB
RFP4N05
RFP4N06
TO-220AB
RFP4N06
NOTE: When ordering, include the entire part number.
Features
• 4A, 50V and 60V
• rDS(ON) = 0.800
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP4N06 Datasheet

4A/ 50V and 60V/ 0.800 Ohm/ N-Channel Power MOSFETs

No Preview Available !

RFP4N06 pdf
RFP4N05, RFP4N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP4N05
RFP4N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperat6ure for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg
50
50
4
10
±20
25
0.2
-55 to 150
300
260
60
60
4
10
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFP4N05
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0
MIN
50
RFP4N06
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
IDSS
IGSS
rDS(ON)
VDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
VGS = ±20V, VDS = 0
ID = 4A, VGS = 10V, (Figures 6, 7)
ID = 4A, VGS = 10V
ID 1A, VDD = 30V, RGS = 50,
RL = 29.2, VGS = 10V,
(Figure 10)
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
- -V
- -V
- 4V
- 1 µA
- 25 µA
- ±100 nA
- 0.800
- 3.2 V
6 15 ns
14 30 ns
16 30 ns
14 25 ns
- 200 pF
- 85 pF
- 30 pF
- 5 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 1A
Diode Reverse Recovery Time
trr ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed test: width 300µs duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
- - 1.4 V
- 100 -
ns
4-524


Part Number RFP4N06
Description 4A/ 50V and 60V/ 0.800 Ohm/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 5 Pages
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RFP4N06 pdf
RFP4N06 Datasheet PDF
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