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Intersil Electronic Components Datasheet

RFP4N100 Datasheet

4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

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RFP4N100 pdf
Data Sheet
RFP4N100, RF1S4N100SM
August 1999 File Number 2457.4
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 4.3A, 1000V
• rDS(ON) = 3.500
• UIS Rating Curve (Single Pulse)
• -55oC to 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP4N100 Datasheet

4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

No Preview Available !

RFP4N100 pdf
RFP4N100, RF1S4N100SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP4N100,
RF1S4N100SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
1000
1000
4.3
17
±20
(See UIS SOA Curve)
(Figures 4, 14, 15)
V
V
A
A
V
mJ
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.2
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
BVDSS ID = 250µA, VGS = 0V (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
IDSS
VDS = 1000V, VGS = 0V
VDS = 800V, VGS = 0V, TC = 150oC
IGSS VGS = ±20V
rDS(ON) ID = 2.5A, VGS = 10V (Figures 8, 9)
td(ON)
tr
VDD = 500V, ID 3.9A, RGS = 9.1Ω,
RL = 120)
td(OFF)
tf
Qg(TOT) VGS = 20V, ID = 3.9A, VDS = 800V
(Figure 13)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 4.3A
Reverse Recovery Time
trr ISD = 3.9A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width 80µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
1000
2
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
4
25
100
±100
3.500
30
50
170
50
120
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
nC
- - 0.83 oC/W
- - 62 oC/W
MIN TYP MAX UNITS
- - 1.8 V
-
-
1000
ns
4-529


Part Number RFP4N100
Description 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 6 Pages
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