Datasheet Summary
FCD9N60NTM N-Channel MOSFET
FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mΩ Features
- RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A
- Ultra Low Gate Charge (Typ.Qg = 17.8nC)
- Low Effective Output Capacitance
- 100% Avalanche Tested
- RoHS pliant
SupreMOSTM
February 2010
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements...