Invensys ASDX015
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.| Part No. | ASDX015 |
|---|---|
| Datasheet | ASDX015 Download |
| Manufacturer |  Invensys |
| Description | 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT |
| Buy | Stock & Price |
FEATURES
● 650 V @ TJ = 150°C● Typ. RDS(on) = 820 mΩ
● Ultra Low Gate Charge (Typ. Qg = 13 nC)
● Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)
● 100% Avalanche Tested
● ESD Improved Capacity
● RoHS Compliant
DESCRIPTION
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.APPLICATIONS
● LCD / LED / PDP TV and Monitor Lighting● Solar Inverter
● Charger D D G G S D-PAK S FCD900N60Z 600 ±20 (f > 1Hz) ±30 4.5 3.5 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) - Derate Above 25oC (TC = 25oC) 13.5 47.5 1 0.52 100 20 52 0.42 -55 to +150 300 Unit V V V A A mJ A mJ V/ns W W/oC oC oC
ABSOLUTE MAXIMUM RATINGS
TC = 25oC unless otherwise noted.
