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ASDX015 - 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Download the ASDX015 datasheet PDF. This datasheet also covers the ASDXxxx variant, as both devices belong to the same 0 to 1 psi through 0 to 100 psi pressure transducers sensym ict family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 820 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 13 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 49 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ASDXxxx_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ASDX015
Manufacturer Invensys
File Size 104.43 KB
Description 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Datasheet download datasheet ASDX015 Datasheet

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Other Datasheets by Invensys

Part Number Description
ASDX001 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX005 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX030 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX100 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCD900N60Z — N-Channel SuperFET® II MOSFET December 2013 FCD900N60Z N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 820 mΩ • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.