Datasheet Summary
FCD900N60Z
- N-Channel SuperFET® II MOSFET
December 2013
FCD900N60Z
N-Channel SuperFET® II MOSFET
600 V, 4.5 A, 900 mΩ Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 820 mΩ
- Ultra Low Gate Charge (Typ. Qg = 13 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF)
- 100% Avalanche Tested
- ESD Improved Capacity
- RoHS pliant
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher...