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JCET

2N7002X Datasheet Preview

2N7002X Datasheet

N-Channel MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encap sulate MOSFETS
2N7002X
V(BR)DSS
60 V
MOSFET( N-Channel )
RDS(on)MAX
 5Ω@10V 
7Ω@5V  
ID
115mA
SOT-89-3L
1.GATE
2. DRAIN
3. SOURCE
FEA TURES
z High density cell design for low RDS(on)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted )
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate -Source Voltage
ID Drain Current
PD Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
RθJA Thermal Resistance from Junction to Ambient
www.cj-elec.com
1
Value
60
±20
115
500
150
-55~+150
250
Unit
V
V
mA
mW
/W
H,Sep,2016




JCET

2N7002X Datasheet Preview

2N7002X Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol Test conditions
Drain-source breakdown voltage
V(BR)DSS VGS=0V,ID=250µA
Gate-threshold voltage*
V(GS)th VDS=VGS, ID=250µA
Gate-body leakage
lGSS VDS=0V, VGS= ±20 V
Zero gate voltage drain current
Drain-source on-resistance*
IDSS
RDS(on)
VDS=60V, VGS=0V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Forward tranconductance*
Drain-source on-voltage
Diode forward voltage*
Turn-on time**
Turn-off time **
gfs
VDS(on)
VSD
td(on)
td(off)
VDS=10V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA,VGS=0V
VDD=25V,RL=50 ,ID=500mA,
VGEN=10V,RG=25
Input capacitance**
Output capacitance**
Reverse transfer capacitance**
Ciss
Coss
Crss
VDS=25V, VGS=0V,f=1MHz
* Pulse Test: Pulse width 300µs,duty cycle2%.
** These parameters have no way to verify.
Min
60
1
80
0.5
0.05
0.55
Typ
Max Unit
2.5
±80
80
5
7
500
3.75
0.375
1.2
20
40
50
25
5
V
nA
nA
ms
V
V
V
ns
pF
www.cj-elec.com
2
H,Sep,2016


Part Number 2N7002X
Description N-Channel MOSFET
Maker JCET
PDF Download

2N7002X Datasheet PDF






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