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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encap sulate MOSFETS
2N7002X
V(BR)DSS
60 V
MOSFET( N-Channel )
RDS(on)MAX
5Ω@10V
7Ω@5V
ID
115mA
SOT-89-3L
1.GATE 2. DRAIN 3. SOURCE
FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate -Source Voltage
ID
Drain Current
PD
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
RθJA
Thermal Resistance from Junction to Ambient
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2N7002X Datasheet
