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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1119 TRANSISTOR (NPN)
FEATURES
z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low
voltage power supply.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature
Value 40 25 7 3 500 150
-55~150
Unit V V V A
mW ℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR 3.
2SD1119 Datasheet
