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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N65
V(BR)DSS
650
N-Channel Power MOSFET
RDS(on)MAX
ID
4.4Ω@10V
2A
TO-251S
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
1. GATE
2. DRAIN
3.