CJP05N60 Datasheet N-Channel MOSFET

Manufacturer: JCET

Datasheet Details

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power.

z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation (note2,Ta=25℃) Maximum Power Dissipation (note3,Tc=25℃) Thermal Resistance from Junction to Ambient Junction Temperature Storage Tem.