CJP04N60 Overview
This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast 1. SOURCE 12 3 recovery time.
Datasheet Details
| Part number | CJP04N60 |
|---|---|
| Datasheet | CJP04N60-JCET.pdf |
| File Size | 1.00 MB |
| Manufacturer | JCET |
| Description | N-Channel MOSFET |
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