Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
4.4Ω@10V
2A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new recovery time. Desighed for high voltage, high speed switching high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
1. GATE 2....